Part number:
FDS3580
Manufacturer:
File Size:
228.71 KB
Description:
N-channel mosfet.
* 7.6 A, 80 V: RDS(ON) = 0.029 W @ VGS = 10 V RDS(ON) = 0.033 W @ VGS = 6 V
* Low Gate Charge (34 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* Pb
* Free and Halide Fr
FDS3580
228.71 KB
N-channel mosfet.
📁 Related Datasheet
FDS3580 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS3580
April 1999 PRELIMINARY
FDS3580
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically t.
FDS3580 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH), 80 V FDS3580
General Description
This N−Channel MOSFET has been designed specifically to
improve the overall effici.
FDS3512 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS3512
May 2001
FDS3512
80V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the o.
FDS3512 - N-Channel MOSFET
(ON Semiconductor)
FDS3512
FDS3512
80V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall e.
FDS3570 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS3570
May 1999 PRELIMINARY
FDS3570
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed spec.
FDS3572 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS3572
November 2003
FDS3572
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
Features
• rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC .
FDS3572 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
80 V, 8.9 A, 16 mW
FDS3572
Features
• RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS =.
FDS3590 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS3590
November 2000
FDS3590
80V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve.
