FDS3590
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
- 6.5 A, 80 V
RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
SO-8
G SS S
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage...
