FDS4141 mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A
* Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A
* High performance trench technology for extremely low rDS.
and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
App.
This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance c.
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