FDS4141_F085 Datasheet | Fairchild Semiconductor

FDS4141_F085 P-Channel Power Trench® MOSFET P-Channel Power Trench® MOSFET -40V, -10.8A, 19.0mΩ May 2009 Features - Typ r DS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A - Typ r DS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A - Typ Qg(TOT) = 35n C at VGS = -10V - High performance trench technology for extremely low r DS(on) - Ro HS pliant - Qualified to AEC Q101 Applications - Control switch in synchronous & non-synchronous buck - Load switch - Inverter SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A .fairchildsemi. FDS4141_F085 P-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC...