Description
This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in con
Features
- Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A.
- Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A.
- High performance trench technology for extremely low rDS(on).
- RoHS Compliant
General.
FDS4141 Datasheet
