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FDS4141 - P-Channel MOSFET

General Description

This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in con

Key Features

  • Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A.
  • Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4141 P-Channel PowerTrench® MOSFET www.onsemi.com FDS4141 P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ Features „ Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A „ Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant General Description This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.