FDS4141 Datasheet | Fairchild Semiconductor

FDS4141 P-Channel Power Trench® MOSFET .onsemi. P-Channel Power Trench® MOSFET -40V, -10.8A, 13.0mΩ Features - Max r DS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A - Max r DS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A - High performance trench technology for extremely low r DS(on) - Ro HS pliant General Description This P-Channel MOSFET has been produced using On Semiconductor’s proprietary Power Trench® technology to deliver low r DS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications - Control switch in synchronous & non-synchronous buck - Load switch - Inverter SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA =...