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Fairchild Semiconductor Electronic Components Datasheet

FDS4141_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDS4141_F085
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 19.0m
May 2009
Features
„ Typ rDS(on) = 10.5mat VGS = -10V, ID = -10.5A
„ Typ rDS(on) = 14.8mat VGS = -4.5V, ID = -8.4A
„ Typ Qg(TOT) = 35nC at VGS = -10V
„ High performance trench technology for extremely low
rDS(on)
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Control switch in synchronous & non-synchronous buck
„ Load switch
„ Inverter
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
©2009 Fairchild Semiconductor Corporation
FDS4141_F085 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS4141_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energy
PD Power Dissipation
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area
Ratings
-40
±20
-10.8
-36
229
1.6
-55 to +150
Units
V
V
A
mJ
W
oC
30 oC/W
81 oC/W
Package Marking and Ordering Information
Device Marking
Device
FDS4141
FDS4141_F085
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = -250µA, VGS = 0V
VDS = -32V,
VGS = ±20V,
-40 -
-V
- - -1 µA
- - ±100 nA
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250µA
ID = -10.5A, VGS = -10V
ID = -8.4A, VGS = -4.5V
ID = -10.5A, VGS = -10V,
TJ = 125oC
ID = -10.5A, VDD = -5V
-1.0 -1.7 -3.0
V
- 10.5 13.0
-
14.8 19.0
m
- 15.3 19.0
34 S
Ciss
Coss
Crss
Rg
Qg(TOT)
Qg(-5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
- 2005 -
- 355 -
- 190 -
pF
pF
pF
f = 1MHz
- 5.0 -
VGS = 0 to -10V
VGS = 0 to -5V
VDD = -20V
ID = -10.5A
-
-
-
35 45
18.6 24.2
5.2 -
nC
nC
nC
- 6.6
- nC
FDS4141_F085 Rev. A 2 www.fairchildsemi.com


Part Number FDS4141_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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