FDS4501H datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V
* Q2: P-Channel
–5.6A,
–20V RDS(on) = 46 mΩ @.

Application

* DC/DC converter
* Power management
* Load switch
* Battery protection D D D D D D DD Q2 5 6 Q1 .

Description

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Featur.

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