FDS4435BZ
Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
Key Features
- Max RDS(on) = 20 mW at VGS = -10 V, ID = -8.8 A
- Max RDS(on) = 35 mW at VGS = -4.5 V, ID = -6.7 A
- Extended VGSS Range (-25 V) for Battery Applications
- HBM ESD Protection Level of ±3.8 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and RoHS pliant Specifications
