FDS4435BZ
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage
DBVDSS / Breakdown Voltage Temperature
DTJ
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ON CHARACTERISTICS
ID = −250 mA, VGS = 0 V
ID = −250 mA, referenced to 25°C
VDS = −24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
−30
−21
V
mV/°C
1
mA
±10
mA
VGS(th) Gate to Source Threshold Voltage
VGS = VDS, ID = −250 mA
−1
DVGS(th) / Gate to Source Threshold Voltage
DTJ
Temperature Coefficient
ID = −250 mA, referenced to 25°C
RDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −8.8 A
VGS = −4.5 V, ID = −6.7 A
VGS = −10 V, ID = −8.8 A, TJ = 125°C
gFS
Forward Transconductance
VDS = −5 V, ID = −8.8 A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = −15 V, VGS = 0 V, f = 1MHz
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
SWITCHING CHARACTERISTICS
td(on)
tr
Turn−On Delay Time
Rise Time
VDD = −15 V, ID = −8.8 A, VGS = −10
V, RGEN = 6 W
td(off) Turn−Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to −10 V, VDD = −15 V,
ID = −8.8 A
Qg
Total Gate Charge
Qgs
Gate to Source Charge
VGS = 0 V to −5 V, VDD = −15 V,
ID = −8.8 A
VDD = −15 V, ID = −8.8 A
Qgd
Gate to Drain “Miller” Charge
DRAIN−SOURCE DIODE CHARACTERISTICS
−2.1
−3
V
6
mV/°C
16
20
mW
26
35
22
28
24
S
1385
1845
pF
275
365
pF
230
345
pF
4.5
W
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = −8.8A (Note 2)
−0.9
−1.2
V
trr
Reverse Recovery Time
IF = −8.8 A, di/dt = 100 A/ms
29
44
ns
Qrr
Reverse Recovery Charge
23
35
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1 mH, IAS = −7 A, VDD = −30 V, VGS = −10 V.
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