FDS4435BZ Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS4435BZ Key Features
- Max RDS(on) = 20 mW at VGS = -10 V, ID = -8.8 A
- Max RDS(on) = 35 mW at VGS = -4.5 V, ID = -6.7 A
- Extended VGSS Range (-25 V) for Battery