FDS4435BZ Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Height: 1.75 mm
Description
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Key Features
- Max RDS(on) = 20 mW at VGS = -10 V, ID = -8.8 A
- Max RDS(on) = 35 mW at VGS = -4.5 V, ID = -6.7 A
- Extended VGSS Range (-25 V) for Battery Applications
- HBM ESD Protection Level of ±3.8 kV Typical (Note
- High Performance Trench Technology for Extremely Low RDS(on)
