FDS4435BZ Datasheet - ON Semiconductor

FDS4435BZ P-Channel MOSFET

This P *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDS4435BZ Features

* Max RDS(on) = 20 mW at VGS =

* 10 V, ID =

* 8.8 A

* Max RDS(on) = 35 mW at VGS =

* 4.5 V, ID =

* 6.7 A

* Extended VGSS Range (

* 25 V) for Battery Applications

* HBM ESD Protection Level of ±3.8 kV Typical (Note 3)

* High Pe

FDS4435BZ-ONSemiconductor.pdf