FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435B.
ON Semiconductor
FDS4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro.
Fairchild Semiconductor
FDS4435BZ - P-Channel PowerTrench MOSFET
FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -10V, ID = -.
VBsemi
FDS4435BZ - P-Channel MOSFET
FDS4435BZ-NL FDS4435BZ-NL Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V .
Fairchild Semiconductor
4435BZ - FDS4435BZ
FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features Max rDS(.
Fairchild Semiconductor
FDS4435BZ_F085 - P-Channel PowerTrench MOSFET
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.
ON Semiconductor
FDS4435BZ-F085 - P-Channel Power MOSFET
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.