Part FDS4435BZ
Description P-Channel PowerTrench MOSFET
Category MOSFET
Manufacturer Fairchild Semiconductor
Size 249.64 KB
Fairchild Semiconductor
FDS4435BZ

Overview

  • Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
  • Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
  • Extended VGSS range (-25V) for battery applications
  • HBM ESD protection level of ±3.8KV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Termination is Lead-free and RoHS compliant April 2009