| Part Number | FDS4435BZ Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Po.
* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A * Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A * Extended VGSS range (-25V) for battery applications * HBM ESD protection level of ±3.8KV typical (note 3) * High performance trench technology for extremely low rDS(on) * High power and current handling . |
FDS4435BZ Datasheet PDF
The FDS4435BZ is a P-Channel PowerTrench MOSFET.
| Part Number | FDS4435BZ Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and.
* Max RDS(on) = 20 mW at VGS = *10 V, ID = *8.8 A * Max RDS(on) = 35 mW at VGS = *4.5 V, ID = *6.7 A * Extended VGSS Range ( *25 V) for Battery Applications * HBM ESD Protection Level of ±3.8 kV Typical (Note 3) * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current H. |
| Part Number | FDS4435BZ Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
FDS4435BZ-NL
FDS4435BZ-NL Datasheet
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.024 at VGS = - 4.5 V
ID (A)d - 9.0 - 7.8
Qg (.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested APPLICATIONS * Load Switch * Battery Switch S SO-8 S1 S2 S3 G4 Top View 8D 7D 6D 5D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit. |