Datasheet Summary
UMW R
General Description
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- VDS (V) =-30V
- ID= -8.8 A(VGS = -10V)
- RDS(ON) ＜ 20mΩ(VGS=-10V)
- RDS(ON) ＜ 35 mΩ(VGS=-4.5V)
FDS4435 -30V P-Channel MOSFET
D5 D6 D7 D8
4G 3S 2S 1S
SOP-8
MOSFET Maximum RatingsTA = 25°C unless otherwise noted
Symbol VDS VGS ID
EAS TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Pulsed
TA = 25°C
Power Dissipation Power Dissipation Single Pulse Avalanche Energy
TA = 25°C TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJC...
