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FDS4435 - -30V P-Channel MOSFET

General Description

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

  • VDS (V) =-30V.
  • ID= -8.8 A(VGS = -10V).
  • RDS(ON) < 20mΩ(VGS=-10V).
  • RDS(ON) < 35 mΩ(VGS=-4.5V) FDS4435 -30V P-Channel MOSFET D5 D6 D7 D8 4G 3S 2S 1S SOP-8 MOSFET Maximum RatingsTA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage.

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Datasheet Details

Part number FDS4435
Manufacturer UMW
File Size 511.65 KB
Description -30V P-Channel MOSFET
Datasheet download datasheet FDS4435 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW R General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • VDS (V) =-30V • ID= -8.8 A(VGS = -10V) • RDS(ON) < 20mΩ(VGS=-10V) • RDS(ON) < 35 mΩ(VGS=-4.