| Part Number | FDS4435 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive v.
* *8.8 A, *30 V RDS(ON) = 20 mΩ @ VGS = *10 V RDS(ON) = 35 mΩ @ VGS = *4.5 V * Low gate charge (17nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Ma. |
FDS4435 Datasheet PDF
The FDS4435 is a P-Channel MOSFET.
| Part Number | FDS4435 Datasheet |
|---|---|
| Description | -30V P-Channel MOSFET |
| Manufacturer | UMW |
| Overview |
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• VDS (V) =-30V • ID= -8.8 A(VGS = -10V) • RDS(ON) ＜ 2.
* VDS (V) =-30V * ID= -8.8 A(VGS = -10V) * RDS(ON) ＜ 20mΩ(VGS=-10V) * RDS(ON) ＜ 35 mΩ(VGS=-4.5V) FDS4435 -30V P-Channel MOSFET D5 D6 D7 D8 4G 3S 2S 1S SOP-8 MOSFET Maximum RatingsTA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Sou. |