Description
This P
Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge superior switching performance.
Features
- 9 A,.
- 30 V. RDS(ON) = 0.017 W @ VGS =.
- 10 V
RDS(ON) = 0.025 W @ VGS =.
- 4.5 V.
- Low Gate Charge (21 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power and Current Handling Capability.
- This Device is Pb.
- Free and RoHS Compliant.
FDS4435A Datasheet
