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FDS4435A - P-Channel MOSFET

General Description

This P Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge superior switching performance.

Key Features

  • 9 A,.
  • 30 V. RDS(ON) = 0.017 W @ VGS =.
  • 10 V RDS(ON) = 0.025 W @ VGS =.
  • 4.5 V.
  • Low Gate Charge (21 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This Device is Pb.
  • Free and RoHS Compliant.

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Datasheet Details

Part number FDS4435A
Manufacturer onsemi
File Size 298.33 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS4435A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, Logic Level, POWERTRENCH) FDS4435A General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features • −9 A, −30 V. RDS(ON) = 0.017 W @ VGS = −10 V RDS(ON) = 0.025 W @ VGS = −4.5 V • Low Gate Charge (21 nC Typical).