FDS4435A Description
This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge superior switching performance. These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDS4435A Key Features
- 9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
- Low Gate Charge (21 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb-Free and RoHS pliant