FDS4435BZ Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS4435BZ Key Features
- Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery