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FDS4435BZ-NL
FDS4435BZ-NL Datasheet
www.VBsemi.com
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.024 at VGS = - 4.5 V
ID (A)d - 9.0 - 7.8
Qg (Typ.) 13 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • Load Switch • Battery Switch
S
SO-8
S1 S2 S3 G4
Top View
8D 7D 6D 5D
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
- 30 V
± 20
TC = 25 °C
- 9.0
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
- 7.2
- 7.0a, b
- 5.
FDS4435BZ Datasheet
