VBsemi Electronics FDS4435BZ
P-Channel MOSFET
| Part No. | FDS4435BZ |
|---|---|
| Datasheet | FDS4435BZ Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
APPLICATIONS
● Load Switch● Battery Switch S SO-8 S1 S2 S3 G4 Top View 8D 7D 6D 5D G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS - 30 V ± 20 TC = 25 °C - 9.0 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C ID TA = 70 °C IDM - 7.2 - 7.0a, b - 5.6a, b A - 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 3.5 - 2.1a, b TC = 25 °C 4.2 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.7 2.5a, b W TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on TC = 25 °C. t ≤ 10...
