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FDS6670AS Datasheet 30V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Overview

FDS6670AS 30V N-Channel PowerTrench® SyncFET™ July 2010 FDS6670AS 30V N-Channel PowerTrench“ SyncFET™.

Key Features

  • x 13.5 A, 30 V. RDS(ON) max= 9.0 m: @ VGS = 10 V RDS(ON) max= 11.5 m: @ VGS = 4.5 V x Includes SyncFET Schottky body diode x Low gate charge (27nC typical) x High performance trench technology for extremely low RDS(ON) and fast switching x High power and current handling capability x RoHS Compliant D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.

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