FDS6676S mosfet equivalent, n-channel mosfet.
* 14.5 A, 30 V. RDS(ON) typ 5.25 mΩ @ VGS = 10 V RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V
*
*
*
Includes SyncFET Schottky body diode Low gate charge (43nC typi.
* DC/DC converter
* Motor drives
*
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
S.
The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676S includes a.
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