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FDS6676S - N-Channel MOSFET

Description

The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Features

  • 14.5 A, 30 V. RDS(ON) typ 5.25 mΩ @ VGS = 10 V RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode Low gate charge (43nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability.

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FDS6676S July 2002 FDS6676S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 14.5 A, 30 V. RDS(ON) typ 5.25 mΩ @ VGS = 10 V RDS(ON) typ 6.00 mΩ @ VGS = 4.
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