FDS6682 Datasheet | Fairchild Semiconductor

February 2004 30V N-Channel Power Trench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications - DC/DC converter Features - 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V - Low gate charge (22 n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability SO-8 G SS...