FDS6690AS Key Features
- 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremely low RDS(
- High power and current handling capability
