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FDS6690A - N-Channel MOSFET

Datasheet Summary

Description

and yet maintain superior switching performance.

Features

  • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Not.

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Datasheet Details

Part number FDS6690A
Manufacturer ON Semiconductor
File Size 314.30 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6690A Datasheet
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Full PDF Text Transcription

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FDS6690A FDS6690A Single N-Channel, Logic-Level, PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.
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