FDS6690S Datasheet | Fairchild Semiconductor

Description The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. Features - 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V - Includes Sync FET Schottky diode - Low gate charge (11 n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - DC/DC converter - Motor drives 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25o C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units 10 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note...