FDS6690AS Description
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.
FDS6690AS Key Features
- 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky diode
- Low gate charge (16nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability