FDS6690AS Datasheet | onsemi

Features General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic Sync FET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. - 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V - Includes Sync FET Schottky diode - Low gate charge (16n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - DC/DC converter - Low side notebooks SO-8 G SS S Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient...