Datasheet4U Logo Datasheet4U.com

FDS6690S - 30V N-Channel PowerTrench SyncFET

Datasheet Summary

Description

The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Features

  • 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V.
  • Includes SyncFET Schottky diode.
  • Low gate charge (11 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

Datasheet preview – FDS6690S

Datasheet Details

Part number FDS6690S
Manufacturer Fairchild Semiconductor
File Size 262.86 KB
Description 30V N-Channel PowerTrench SyncFET
Datasheet download datasheet FDS6690S Datasheet
Additional preview pages of the FDS6690S datasheet.
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS6690S May 2000 PRELIMINARY FDS6690S 30V N -Channel PowerTrench® SyncFET™ General Description The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. Features • 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.
Published: |