FDS6892AZ - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FDS6892AZ
Manufacturer	Fairchild (now onsemi)
File Size	78.83 KB
Description	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Datasheet	FDS6892AZ Datasheet

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Overview

FDS6892AZ October 2001 FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench®.

Key Features

7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V.
Low gate charge (12 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D2 D D2 D DD1 D1 D 5 6 G1 S1 G Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S 7 8 S S 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed TA=25 C unless other.

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