FDS6892A Datasheet - Fairchild Semiconductor

FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDS6892A Features

* 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V

* Low gate charge (12 nC)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8

FDS6892A_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS6892A

Manufacturer:

Fairchild Semiconductor

File Size:

80.10 KB

Description:

Dual n-channel logic level pwm optimized powertrench mosfet.

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FDS6892A FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor

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