FDS6898AZ Datasheet - Fairchild Semiconductor

FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDS6898AZ Features

* 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V

* Low gate charge (16 nC typical)

* ESD protection diode (note 3)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D2 D D2 D

FDS6898AZ Datasheet (77.73 KB)