Datasheet Details
Part number:
FDS6812A
Manufacturer:
Fairchild Semiconductor
File Size:
79.94 KB
Description:
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Features
* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
* Low gate charge (12 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pi
FDS6812A_FairchildSemiconductor.pdf
FDS6812A, Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered appli
FDS6812A Distributor
📁 Related Datasheet
📌 All Tags
