FDS6812A Datasheet - Fairchild Semiconductor

FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDS6812A Features

* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V

* Low gate charge (12 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pi

FDS6812A_FairchildSemiconductor.pdf