FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Fairchild Semiconductor

Description

FDS6812A November 2001 FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General .
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number: FDS6812A
Manufacturer: Fairchild Semiconductor
File Size: 79.94 KB
Datasheet: FDS6812A_FairchildSemiconductor.pdf
Description: Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Features

* 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
* Low gate charge (12 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pi

FDS6812A Distributors

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FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor

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