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MOSFET – P-Channel, POWERTRENCH)
-30 V, -14.5 A, 7.8 mW
FDS6673BZ
General Description This P−Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A • Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 6.5 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • Pb−Free, Halide Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
FDS6673BZ Datasheet
