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FDS6673BZ P-Channel MOSFET

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Description

MOSFET * P-Channel, POWERTRENCH) -30 V, -14.5 A, 7.8 mW FDS6673BZ General .
This P. Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on. st.

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Features

* Max RDS(on) = 7.8 mW @ VGS =
* 10 V, ID =
* 14.5 A
* Max RDS(on) = 12 mW @ VGS =
* 4.5 V, ID =
* 12 A
* Extended VGS Range (

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDS6673BZ-like datasheet