FDS6673BZ Datasheet - ON Semiconductor

FDS6673BZ P-Channel MOSFET

This P *Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on *state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pack.

FDS6673BZ Features

* Max RDS(on) = 7.8 mW @ VGS =

* 10 V, ID =

* 14.5 A

* Max RDS(on) = 12 mW @ VGS =

* 4.5 V, ID =

* 12 A

* Extended VGS Range (

* 25 V) for Battery Applications

* HBM ESD Protection Level of 6.5 kV Typical (Note 3)

* High Perfo

FDS6673BZ Datasheet (282.02 KB)