These N-Channel Logic Level MOSFETs are produced
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
9.4 A, 20 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V.
Low gate charge (16 nC typical).
ESD protection diode (note 3)
These devices are well suited for low voltage and battery powered.