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FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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Description

FDS6892AZ October 2001 FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General .
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number
FDS6892AZ
Manufacturer
Fairchild Semiconductor
File Size
78.83 KB
Datasheet
FDS6892AZ_FairchildSemiconductor.pdf
Description
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Features

* 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V
* Low gate charge (12 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 G1 S1 G Q1 4 3 2 Q2 S

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