FDS6892AZ Datasheet (Fairchild Semiconductor) - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6892AZ, Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered appli

FDS6892AZ Features

* 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V

* Low gate charge (12 nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D2 D D2 D DD1 D1 D 5 6 G1 S1 G Q1 4 3 2 Q2 S