FDS6612A Datasheet - ON Semiconductor

N-Channel MOSFET

FDS6612A Features

* 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS

FDS6612A General Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applica.

FDS6612A Datasheet (928.39 KB)