FDS6670AS Datasheet - Fairchild Semiconductor

FDS6670AS 30V N-Channel MOSFET

The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s mo.

FDS6670AS Features

* x 13.5 A, 30 V. RDS(ON) max= 9.0 m: @ VGS = 10 V RDS(ON) max= 11.5 m: @ VGS = 4.5 V x Includes SyncFET Schottky body diode x Low gate charge (27nC typical) x High performance trench technology for extremely low RDS(ON) and fast switching x High power and current handling capability x RoHS Compliant

FDS6670AS-FairchildSemiconductor.pdf