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FDS6670AS 30V N-Channel MOSFET

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Description

FDS6670AS 30V N-Channel PowerTrench® SyncFET™ July 2010 FDS6670AS 30V N-Channel PowerTrench“ SyncFET™ General .
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Datasheet Specifications

Part number
FDS6670AS
Manufacturer
Fairchild Semiconductor
File Size
227.98 KB
Datasheet
FDS6670AS-FairchildSemiconductor.pdf
Description
30V N-Channel MOSFET

Features

* x 13.5 A, 30 V. RDS(ON) max= 9.0 m: @ VGS = 10 V RDS(ON) max= 11.5 m: @ VGS = 4.5 V x Includes SyncFET Schottky body diode x Low gate charge (27nC typical) x High performance trench technology for extremely low RDS(ON) and fast switching x High power and current handling capability x RoHS Compliant

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