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FDS6675BZ - P-Channel MOSFET

FDS6675BZ Description

MOSFET * P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW FDS6675BZ .
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance.

FDS6675BZ Features

* Max RDS(on) = 13 mW at VGS =
* 10 V, ID =
* 11 A
* Max RDS(on) = 21.8 mW at VGS =
* 4.5 V, ID =
* 9 A
* Extended VGS Range (

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P-Channel MOSFET On Semiconductor
On Semiconductor FDS6675BZ-like datasheet

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