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FDS6675BZ P-Channel MOSFET

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Description

MOSFET * P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW FDS6675BZ .
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance.

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Features

* Max RDS(on) = 13 mW at VGS =
* 10 V, ID =
* 11 A
* Max RDS(on) = 21.8 mW at VGS =
* 4.5 V, ID =
* 9 A
* Extended VGS Range (

FDS6675BZ Distributors

📁 Related Datasheet

FDS6675 FDS6675A FDS6670A FDS6670AS FDS6670S FDS6672A

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FDS6675BZ P-Channel MOSFET On Semiconductor
On Semiconductor FDS6675BZ-like datasheet
FDS6685