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FDS6675

Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET

FDS6675 Features

* -11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1

FDS6675 General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer ap.

FDS6675 Datasheet (247.46 KB)

Preview of FDS6675 PDF

Datasheet Details

Part number:

FDS6675

Manufacturer:

Fairchild Semiconductor

File Size:

247.46 KB

Description:

Single p-channel/ logic level/ powertrenchtm mosfet.

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FDS6675 Single P-Channel Logic Level PowerTrenchTM MOSFET Fairchild Semiconductor

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