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FDS6673AZ P-Channel MOSFET

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Description

FDS6673AZ January 2005 FDS6673AZ 30 Volt P-Channel PowerTrench MOSFET General .
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Features

* 14.5 A,
* 30 V. RDS(ON) = 7.2 mΩ @ VGS =
* 10 V RDS(ON) = 11 mΩ @ VGS =
* 4.5 V
* Extended VGSS range (

Applications

* ESD protection diode (note 3)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage

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