FDS6676AS-G Description
SyncFETt * N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General .
The FDS6676AS is designed to replace a single SO.
8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
FDS6676AS-G Features
* 14.5 A, 30 V
* RDS(ON) Max = 6.0 mW at VGS = 10 V
* RDS(ON) Max = 7.25 mW at VGS = 4.5 V
* Includes SyncFET Schottky Body Diode
* Low Gate Charge (45 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
and Fast Switching
FDS6676AS-G Applications
* DC/DC Converter
* Low Side Notebook
DATA SHEET www. onsemi. com
VDSS MAX 30 V
RDS(on) MAX 6.0 mW @ 10 V 7.25 mW @ 4.5 V
ID MAX 14.5 A
DD DD S S SG
SOIC8 (SO
* 8) CASE 751EB
MARKING DIAGRAM
FDS6676AS ALYW
FDS6676AS A L YW
= Device Code = Assembly Site = Wafer Lot Number
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