FDS6676 30V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDS6676 May 2003 FDS6676 30V N-Channel PowerTrench ® MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS6676
Manufacturer: Fairchild Semiconductor
File Size: 99.80 KB
Datasheet: FDS6676_FairchildSemiconductor.pdf
Description: 30V N-Channel PowerTrench MOSFET

Features

* 14.5 A, 30 V. RDS(ON) = 7 mΩ @ V GS = 10 V RDS(ON) = 8 mΩ @ V GS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (45 nC typ)

Applications

* DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Conti nuous
* Pulsed T A=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1a) Units V V A W

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FDS6676 30V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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