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FDS6676S N-Channel MOSFET

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Description

FDS6676S July 2002 FDS6676S 30V N-Channel PowerTrench® SyncFET™ General .
The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Features

* 14.5 A, 30 V. RDS(ON) typ 5.25 mΩ @ VGS = 10 V RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode Low gate charge (43nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handli

Applications

* DC/DC converter
* Motor drives
* D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings 3

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