FDS6670S N-Channel MOSFET

Fairchild Semiconductor

Description

FDS6670S August 2001 FDS6670S 30V N-Channel PowerTrench® SyncFET ™ General .
The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Datasheet Specifications

Part number: FDS6670S
Manufacturer: Fairchild Semiconductor
File Size: 95.75 KB
Datasheet: FDS6670S_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 13.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode Low gate charge (24nC typical) High performance trench technology for extremely low RDS(ON) and fast switching
* High power and current handl

Applications

* DC/DC converter
* Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (

FDS6670S Distributors

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FDS6670S N-Channel MOSFET Fairchild Semiconductor

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