FDS6670S
FDS6670S is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology.
Features
- 13.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
- -
- Includes Sync FET Schottky body diode Low gate charge (24n C typical) High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability
Applications
- DC/DC converter
- Motor drives
5 6 4 3 2 1
SO-8
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
T A =25 o C unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
13.5 50 2.5 1.2 1
- 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note...
