FDS6670S Key Features
- 13.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode Low gate charge (24nC typical) High performance trench technology for extremely low
- High power and current handling capability