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FDS6673BZ-F085 P-Channel MOSFET

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Description

FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General .
Features. Max rDS(on) = 7.

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Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for ba

Applications

* resistance.
* HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
* High performance trench technology for extremely low rDS(on)
* High

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FDS6673BZ-F085 P-Channel MOSFET ON Semiconductor
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