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FDS6673BZ-F085 Datasheet - ON Semiconductor

FDS6673BZ-F085 P-Channel MOSFET

FDS6673BZ-F085 Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state

* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

* Extended VGS range (-25V) for ba

FDS6673BZ-F085-ONSemiconductor.pdf

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Datasheet Details

Part number:

FDS6673BZ-F085

Manufacturer:

ON Semiconductor ↗

File Size:

504.98 KB

Description:

P-channel mosfet.

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FDS6673BZ-F085 FDS6673BZ-F085 P-Channel MOSFET ON Semiconductor

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