FDS6673BZ-F085 Datasheet, Mosfet, ON Semiconductor

FDS6673BZ-F085 Features

• Mosfet
• Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to min

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FDS6673BZ-F085

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ON Semiconductor ↗

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📄 Datasheet

Description:

P-channel mosfet. Features

Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced

FDS6673BZ-F085 Application

• Applications resistance.
• HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load sw

TAGS

FDS6673BZ-F085

ON Semiconductor

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