Part number:
FDS6673BZ_F085
Manufacturer:
Fairchild Semiconductor
File Size:
462.35 KB
Description:
P-channel powertrench mosfet.
FDS6673BZ_F085-FairchildSemiconductor.pdf
Datasheet Details
Part number:
FDS6673BZ_F085
Manufacturer:
Fairchild Semiconductor
File Size:
462.35 KB
Description:
P-channel powertrench mosfet.
FDS6673BZ_F085, P-Channel PowerTrench MOSFET
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac
FDS6673BZ_F085 Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for battery applications
* HBM ESD protection level of 6.5kV typical (note 3)
* High performance trench technology for extremely low rDS(on)
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