FDS6673BZ_F085 Datasheet - Fairchild Semiconductor

FDS6673BZ_F085 P-Channel PowerTrench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac.

FDS6673BZ_F085 Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A

* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

* Extended VGS range (-25V) for battery applications

* HBM ESD protection level of 6.5kV typical (note 3)

* High performance trench technology for extremely low rDS(on)

FDS6673BZ_F085-FairchildSemiconductor.pdf