FDS6673BZ_F085 Datasheet, Mosfet, Fairchild Semiconductor

FDS6673BZ_F085 Features

• Mosfet
• Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
• Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
• Extended VGS range (-25V) for battery applications
• HBM ES

PDF File Details

Part number:

FDS6673BZ_F085

Manufacturer:

Fairchild Semiconductor

File Size:

462.35kb

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📄 Datasheet

Description:

P-channel powertrench mosfet. This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to

FDS6673BZ_F085 Application

• Applications common in Notebook Computers and Portable Battery Packs. Features
• Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
• Max

TAGS

FDS6673BZ_F085

Fairchild Semiconductor

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