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FDS6673BZ_F085 P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Description

FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 General .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDS6673BZ_F085
Manufacturer: Fairchild Semiconductor
File Size: 462.35 KB
Datasheet: FDS6673BZ_F085-FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

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FDS6673BZ_F085 P-Channel PowerTrench MOSFET Fairchild Semiconductor

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