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FDS6676AS - N-Channel MOSFET

FDS6676AS Description

SyncFETt * N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General .
The FDS6676AS is designed to replace a single SO. 8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

FDS6676AS Features

* 14.5 A, 30 V
* RDS(ON) Max = 6.0 mW at VGS = 10 V
* RDS(ON) Max = 7.25 mW at VGS = 4.5 V
* Includes SyncFET Schottky Body Diode
* Low Gate Charge (45 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching

FDS6676AS Applications

* DC/DC Converter
* Low Side Notebook DATA SHEET www. onsemi. com VDSS MAX 30 V RDS(on) MAX 6.0 mW @ 10 V 7.25 mW @ 4.5 V ID MAX 14.5 A DD DD S S SG SOIC8 (SO
* 8) CASE 751EB MARKING DIAGRAM FDS6676AS ALYW FDS6676AS A L YW = Device Code = Assembly Site = Wafer Lot Number

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