FDS6676AS Datasheet (ON Semiconductor)

FDS6676AS, N-Channel MOSFET

The FDS6676AS is designed to replace a single SO *8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6676AS includes an integrated Schottky diode using onsem

FDS6676AS Features

* 14.5 A, 30 V

* RDS(ON) Max = 6.0 mW at VGS = 10 V

* RDS(ON) Max = 7.25 mW at VGS = 4.5 V

* Includes SyncFET Schottky Body Diode

* Low Gate Charge (45 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching