FDS6679AZ

P-Channel MOSFET

ON Semiconductor

FDS6679AZ Features

* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A

* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

* Extended VGS range (-25V) for battery applications

* HBM ESD protection level of 6kV typical (note 3)

* High performance trench technology for extremely low rDS(o

FDS6679AZ General Description

This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Fe.

FDS6679AZ Datasheet (438.67 KB)