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FDS6675A 30V P-Channel PowerTrench MOSFET

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Description

FDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General .
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

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Datasheet Specifications

Part number
FDS6675A
Manufacturer
Fairchild Semiconductor
File Size
103.91 KB
Datasheet
FDS6675A-FairchildSemiconductor.pdf
Description
30V P-Channel PowerTrench MOSFET

Features

* 11 A,
* 30 V RDS(ON) = 13 mΩ @ VGS =
* 10 V RDS(ON) = 19 mΩ @ VGS =
* 4.5 V
* Low gate charge
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capabilit

Applications

* requiring a wide range of gate drive voltage ratings (4.5V
* 25V). Applications
* Power management
* Load switch

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