Datasheet Details
Part number:
FDS6875
Manufacturer:
Fairchild Semiconductor
File Size:
194.66 KB
Description:
Dual P-Channel MOSFET
Features
* -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2
FDS6875_FairchildSemiconductor.pdf
FDS6875, Dual P-Channel MOSFET
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable elect
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