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FDS6875 Dual P-Channel MOSFET

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Description

November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General .
These P-Channel 2.

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Datasheet Specifications

Part number
FDS6875
Manufacturer
Fairchild Semiconductor
File Size
194.66 KB
Datasheet
FDS6875_FairchildSemiconductor.pdf
Description
Dual P-Channel MOSFET

Features

* -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2

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