FDS6875 Datasheet - Fairchild Semiconductor

FDS6875 Dual P-Channel MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable elect.

FDS6875 Features

* -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2

FDS6875_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS6875

Manufacturer:

Fairchild Semiconductor

File Size:

194.66 KB

Description:

Dual p-channel mosfet.

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FDS6875 FDS6875 Dual P-Channel MOSFET Fairchild Semiconductor

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