FDS6875 Datasheet, Mosfet, Fairchild Semiconductor

FDS6875 Features

• Mosfet -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power

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FDS6875

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Fairchild Semiconductor

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📄 Datasheet

Description:

Dual p-channel mosfet. These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especi

FDS6875 Application

• Applications load switching and power management, battery charging and protection circuits. Features -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V

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FDS6875

Fairchild Semiconductor

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