Datasheet4U Logo Datasheet4U.com

FDS6930B - Dual N-Channel MOSFET

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

  • 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6930B Dual N-Channel MOSFET Kexin
FDS6930A Dual N-Channel MOSFET ON Semiconductor
FDS6900AS Dual N-Channel MOSFET ON Semiconductor
FDS6900AS-G Dual N-Channel MOSFET ON Semiconductor
FDS6910 Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS6930A Dual N-Channel MOSFET
FDS6900AS Dual N-Ch PowerTrench SyncFET
FDS6900S Dual N-Ch PowerTrench SyncFet
FDS6910 MOSFET
FDS6911 MOSFET

Full PDF Text Transcription

Click to expand full text
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Features ■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Published: |