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FDS6930B - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 5.5 A (VGS = 10V).
  • RDS(ON) ＜ 38mΩ (VGS = 10V).
  • RDS(ON) ＜ 50mΩ (VGS = 4.5V).
  • Fast switching speed.
  • High power and current handling capability SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 54 63 72 81.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current (Note.1) Symbol VDS VGS ID IDM Power Dissipation Thermal Resist.

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SMD Type Dual N-Channel MOSFET FDS6930B (KDS6930B) MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) ＜ 38mΩ (VGS = 10V) ● RDS(ON) ＜ 50mΩ (VGS = 4.5V) ● Fast switching speed ● High power and current handling capability SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 54 63 72 81 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current (Note.1) Symbol VDS VGS ID IDM Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range (Note.1) (Note.2) (Note.3) (Note.1) PD RthJA RthJC TJ Tstg Note.1: 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper Note.