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FDS6930A - Dual N-Channel MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features

  • 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 F6D9S30A SO-8 G2 S2 pin 1 G1 S1 SO-8 SOT-223 5 6 7 8 SOIC-16 4 3 2 1 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Dr.

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Datasheet Details

Part number FDS6930A
Manufacturer onsemi
File Size 345.89 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS6930A Datasheet

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Full PDF Text Transcription (Reference)

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FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability.