Description
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1 D1
F6D9S30A
SO-8
G2
S2
pin 1
G1 S1
SO-8
SOT-223
5 6 7 8
SOIC-16
4 3 2 1
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Dr.
FDS6930A Datasheet
