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FDS6930B - Dual N-Channel MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features

  • 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET Features ■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.